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TLMB / G / O / P / S / Y2100
Vishay Semiconductors
MiniLED
Description
The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale, high-power products that are expected to work reliably in an arduous environment. This is often the case in automotive and industrial application of course.
19226
Features
* SMD LEDs with exceptional brightness * Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packaging unit IVmax/IVmin 2.0, optional 1.6 * Lead-free device * * * * * *
e3 Pb
Pb-free
Applications
Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use
Parts Table
Part TLMS2100 TLMO2100 TLMY2100 TLMG2100 TLMP2100 TLMB2100 Color, Luminous Intensity Red, IV = 7.5 mcd (typ.) Soft orange, IV = 7.5 mcd (typ.) Yellow, IV = 7.5 mcd (typ.) Green, IV = 10 mcd (typ.) Pure green, IV = 2.2 mcd (typ.) Blue, IV = 7 mcd (typ.) Angle of Half Intensity () 60 60 60 60 60 60 Technology GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP GaP on GaP GaN
Document Number 83199 Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified TLMS2100 ,TLMO2100 ,TLMY2100 ,TLMG2100 ,TLMP2100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient TLMB2100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient according IPC 9501 mounted on PC board (pad size > 5 mm2) Tamb 60 C tp 10 s Tamb 60 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 20 0.1 90 100 - 40 to + 100 - 40 to + 100 245 480 Unit V mA A mW C C C C K/W according IPC 9501 mounted on PC board (pad size > 5 mm2) Tamb 60 C tp 10 s Tamb 60 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 0.5 95 100 - 40 to + 100 - 40 to + 100 245 480 Unit V mA A mW C C C C K/W
Optical and Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Red
TLMS2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
2) 2)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 2.5 624
Typ. 7.5 628 640 60 2.1
Max 636
Unit mcd nm nm deg
Dominant wavelength
3.0
V V pF
6
15 15
in one Packing Unit IVmax/IVmin 2.0
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Document Number 83199 Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors Soft Orange
TLMO2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
2) 2)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 3.2 598
Typ. 7.5 605 605 60 2.1
Max 611
Unit mcd nm nm deg
Dominant wavelength
3
V V pF
6
15 15
in one Packing Unit IVmax/IVmin 2.0
Yellow
TLMY2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
2) 2)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 3.2 581
Typ. 7.5 588 585 60 2.2
Max 594
Unit mcd nm nm deg
Dominant wavelength
3
V V pF
6
15 15
in one Packing Unit IVmax/IVmin 2.0
Green
TLMG2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
2) 2)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 6.3 562
Typ. 10 568 565 60 2.2
Max 575
Unit mcd nm nm deg
Dominant wavelength
3.0
V V pF
6
15 15
in one Packing Unit IVmax/IVmin 2.0
Document Number 83199 Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors Pure green
TLMP2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
2) 2)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 1.0 555
Typ. 2.2 560 555 60 2.4
Max 565
Unit mcd nm nm deg
Dominant wavelength
3
V V pF
6
15 15
in one Packing Unit IVmax/IVmin 2.0
Blue
TLMB2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage
1) 1)
Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A
Symbol IV d p VF VR
Min 4.0
Typ. 7.0 465 428 60 3.9
Max
Unit mcd nm nm deg
Dominant wavelength
4.5
V V
5.0
in one Packing Unit IVmax/IVmin 1.6
Typical Characteristics (Tamb = 25 C unless otherwise specified)
120
PV - Power Dissipation (mW) I F - Forward Current ( mA )
100 80 60 40 20 0 0
Red, Soft orange, Yellow, Green, Pure green Blue
40 35 30 25 Blue 20 15 10 5 0 Red, Soft orange, Yellow, Green, Pure green
20
40
60
80
100
18024
0
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
18023
Tamb - Ambient Temperature ( C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 83199 Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
0
I V re l - Relative Luminous Intensity
10
20 30
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
95 10319
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Document Number 83199 Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors Package Dimensions in mm
16892
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Document Number 83199 Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors Reel Dimensions
16938
Document Number 83199 Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors Tape Dimensions
16939
Leader and Trailer
Trailer
no devices devices
Leader
no devices
End
min. 200 min. 400
Start
96 11818
GS08 = 3000 pcs
www.vishay.com 8 Document Number 83199 Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors Cover Tape Peel Strength
According to DIN EN 60286-3 0.1 to 1.3 N 300 10 mm/min 165 - 180 peel angle
Label
Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data.
Vishay Semiconductor GmbH standard bar code product label (finished goods) Plain Writing Item-Description Item-Number Selection-Code LOT-/ Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin Long Bar Code Top Item-Number Plant-Code Sequence-Number Quantity Total Length Short Bar Code Bottom Selection-Code Data-Code Batch-Number Filter Total Length Abbreviation - INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ Type N N X N - Type X N X - - Length 18 8 3 10 3 (YWW) 2 8 - - - Company Logo Length 8 2 3 8 21 Length 3 3 10 1 17
16942
Document Number 83199 Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors Dry Packing
The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
Aluminium bag
Label
Reel
17028
15973
Example of JESD22-A112 Level 2 label
ESD Precaution
Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging.
Final Packing
The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.
Recommended Method of Storage
Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 1 year under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C + 5 C/ -0 C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 C +5 C and < 5 % RH for all device containers or 24 hours at 100 C +5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2 label is included on all dry bags.
Vishay Semiconductors Standard Bar-Code Labels
The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
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Document Number 83199 Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83199 Rev. 1.6, 20-Jan-05
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